Pollack G. – TechConnect Briefs

Simple Method of Characterizing CMOS Channel Dopant Profiles Using CV Technique

Kapila D., Kulkarni M., Fernando C., Davis J., Vasanth K., Pollack G., Texas Instruments, Inc., US

In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles [...]

A Method of MOSFET Dopant Profile Prediction and its Use in Transistor Design

Kulkarni M., Vasanath K., Davis J., Saxena S., Pollack G., Texas Instruments, Inc., US

As MOS transistor size shrinks to sub-quartermicron dimensions, accurate knowledge of the dopant concentration in various regions of the transistor is becoming more and more important for device simulations. We have developed a methodology to [...]