Noda N. – TechConnect Briefs

Reduction in Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High Acceptor Density in a Buffer Layer

Saito Y., Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density and the field plate [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer

Noda N., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep acceptor is considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence [...]