HiSIM: Accurate Charge Modeling Important for RF Era
Miura-Mattausch M., Navarro D., Ueno H., Mattausch H.J., Miura-Mattausch M., Morikawa K., Itoh S., Kobayashi A., Masuda H., Hiroshima University, JP
Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge [...]