Matsuda K. – TechConnect Briefs

Structure and Mechanical Properties of Cr(Al)N/Al2O3 Nanocomposite Hard Coatings Fabricated by Differential Pumping Cosputtering

Kawasaaki M., Onishi I., Matsuda K., Nose M., Shiojiri M., JEOL USA Inc., US

Analytical electron microscopy revealed the structure of Cr(Al)N/Al2O3 nanocomposite coatings prepared on the Si substrate rotated at a speed as high as 12 rpm in a differential pumping cosputtering system(DPCS). The main layer that sputter-deposited [...]

Shear Piezoresistance Coefficient Pi44 of n-type Silicon

Kanda Y., Matsuda K., Kojundo Chemical Laboratory Co. LTD, JP

The PR in silicon has been widely used in the framework of micro-electro mechanical systems (MEMS). Origin of the shear PR effect even in n-type Si was not always explained completely in despite of simpler [...]

Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Matsuda K., Nakatsuji H., Kamakura Y., Naruto University of Education, JP

Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

McMahon W., Matsuda K., Lee J., Hess K., Lyding J., University of Illinois, US

An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed [...]

MEMS Simulation in Heavily Doped Silicon Devices

Matsuda K., Kanda Y., Naruto University of Education, US

Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent [...]

Simulation for Low Temperature Coefficient Design of Piezoresistive and Hall Sensors

Matsuda K., Kanda Y., Naruto University of Education, JP

Simulation for the temperature coefficient of piezoresistive and Hall sensors is presented. Carrier and ionized impurity concentrations in the n-type silicon gage are calculated from the charge balance equation by applying Newton iteration scheme. The [...]

Implementation of Strain Induced Effects in Sensor Device Simulation

Matsuda K., Kanda Y., Naruto University of Education, JP

Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton's method taking into [...]

Simulation of Silicon Piezoresistive Sensors

Matsuda K., Kanda Y., Toyo University, JP

The temperature infiuence of the heavy doped silicon piezoresistive sensors is simulated. In this simulation, the density of state functions for impurity band and band edge tail are taken into account for carrier and ionized [...]