Modeling of the impurity-gradient effect in high-voltage MOSFETs
Maekawa Y., Fukushima K., Tanaka A., Kikuchihara H., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
Two major high-voltage MOSFET types are commonly used by semiconductor industries. One has a symmetrical structure, and the other has a laterally-diffused asymmetric structure called LDMOS. Here our focus is the LDMOS structure, where an [...]