Ma Q. – TechConnect Briefs

Nanochip – Ultra-High Data Density MEMS Memory Device

Adams D., Belov N., Chou T-K., Heck J., Kim B., Knight G., Ma Q., Rao V., Tchelepi G., Nanochip, Inc., US

Nanochip developed a conceptual prototype of a probe storage device (nanochip). The device employs a ferroelectric non-volatile memory, which permits robust write, non-destructive read and simple data overwriting operations. Read-write operations require low power and [...]

Scanning Probe Charge Reading of Ferroelectric Polarization with Nanoscale Resolution

Kim B.M., Adams D.E., Tran Q., Ma Q., Rao V., Nanochip, Inc., US

Probe storage with epitaxial ferroelectric PbZr0.2Ti0.8O3 (PZT) media [1, 2] is a promising technology for terabyte/inch2 storage devices because nanoscale and nonvolatile polarizations may be reversibly written and read by a scanning probe tip. Piezoresponse [...]

A Novel Approach to Integrate Multiple Frequencies of Film Bulk Acoustic Resonators (FBAR) In A Single Chip

Huang Z., Suo Z., Wang L.-P., Shim D., Ma Q., Intel Corporation, US

Driven by fast growth of wireless communications, film bulk acoustic resonators (FBAR) have been extensively studied as RF filters. Recently, an integrated RF solution, which could include multiple mobile bands, WLAN, Bluetooth, GPS, and etc., [...]