Nanochip developed a conceptual prototype of a probe storage device (nanochip). The device employs a ferroelectric non-volatile memory, which permits robust write, non-destructive read and simple data overwriting operations. Read-write operations require low power and can be performed very fast. The device contains: (a) an electromagnetic X-Y micro-mover featuring a large range of motion, low X-Y cross-talk, long-term stability, good shock protection and (b) an array of cantilevers with vertical and lateral electrostatic actuators and with AFM-type sharp tips (read-write heads) built on top of CMOS circuitry (read channel electronics and analog circuits for actuation control) using a low-temperature process. Without actuation the tips do not contact the memory stack. Vertical actuation allows for loading a selected set of tips onto media for read/write operations. Lateral actuators are used for adjusting multiple tips on corresponding data tracks permitting device operation over a wide temperature range. Digital electronics is located on a separate controller chip. This work shows that significant drawbacks of the earlier probe storage concepts can be overcome and brings this type of memory devices much closer to commercialization.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 526 - 529
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications