Loussier X. – TechConnect Briefs

Compact modeling of drain current in Independently Driven Double-Gate MOSFETs

Munteanu D., Autran J-L, Loussier X., Tintori O., L2MP-CNRS, FR

As CMOS scaling is approaching its limits, Double-Gate (DG) MOSFET is envisaged as a possible alternative to the conventional bulk MOSFET. In spite of excellent electrical performances due to its multiple conduction surfaces, conventional DG [...]

Compact modeling and performance analysis of Double-Gate MOSFET-based circuits

Tintori O., Munteanu D., Loussier X., Autran J-L, Regnier A., Bouchakour R., L2MP, FR

Double-Gate (DG) MOS transistors and related multiple-gate device architectures are nowadays widely identified as one of the most promising solutions for meeting the roadmap requirements for the end-of-the-roadmap integration. One of the identified challenges for [...]

Compact Model of drain-current in Double-Gate MOSFETs including carrier quantization and short-channel effects

Loussier X., Munteanu D., Autran J-L, Harrison S., Cerutti R., L2MP, FR

Double-Gate (DG) structure has been in the last years the object of intensive research because its enormous potentiality to push back the integration limits to which conventional devices are subjected. Although the operation of DG [...]