Li Y. – Page 4 – TechConnect Briefs

Atomistic Simulation of Cracktip Failure Pathways in Fe and Fe Alloys

Gordon P.A., Neeraj T., Li Y., Luton M.J., ExxonMobil Research & Engineering, US

This work employs transition pathway analysis to examine the activation barriers associated with failure of atomically sharp cracktips in Fe. The effect of structual and compositional heterogeneities are explored, as it is speculated that these [...]

High Frequency Characteristics of Nanoscale Silicon Nanowire FET

Li Y., Hwang C-H, National Chaio Tung University, TW

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving the high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar [...]

Random Discrete Dopant Fluctuated Sub-32 nm FinFET Devices

Li Y., Hwang C-H, Yu S-M., Huang H.M., Chen H-M, National Chaio Tung University, TW

Scaling of silicon production technology has approached the sub-65nm regime. Device’s electrical characteristics fluctuate according to the discreteness and randomness of dopants in sub-32nm technologies. In this paper, we investigate the random-dopant-induced electrical characteristics fluctuations, [...]

Three-Dimensional Simulation of Polysilicon Thin Film Transistors with Single-, Double-, and Surrounding-Gate Structures

Li Y., Lee B-S, National Chiao Tung University, TW

Thin-film-transistors (TFTs) with high mobility and low leakage current are desirable in many applications especially in liquid crystal display (LCD).We have computationally analyzed electrical properties of thin film transistors using three-dimensional (3D) simulation. It is [...]

Effect of Fin Angle on Electrical Characteristics of Nanoscale Bulk FinFETs

Li Y., Chen W-H, National Chiao Tung University, TW

Bulk-finFET (fin-shaped field effect transistor) has been viewed as a good candidate for nanoscale VLSI device fabrication and nanoelectronic circuit design [1-5]. The structure features an excellent device characteristics compared with conventional planer structures. In [...]

Microfluidic T-Form Mixer Utilizing Pressure Disturbances

Ma Y.B., Fields M., Sun C.P., Zhang F.Y., Liao J-C, Li Y., Liao J-C, Churchill B.M., Ho C-M., University of California at Los Angeles, US

A simple solution to mixing problems in micro fluidic systems was presented in this paper. A T-form microfluidic mixer was designed and tested utilizing pressure disturbances. The performance of the mixer was studied through both [...]

A Parallel Intelligent OPC Technique for Design and Fabrication of VLSI Circuit

Yu S-M., Li Y., National Chiao Tung University, TW

Optical lithography is the key technology used in very large scale integrated (VLSI) circuit and systemon- a-chip (SoC) fabrication [1-3]. The exposure on wafer has distortions due to the proximity effects. Hence, a correction of [...]

A Two-Dimensional Numerical Simulation of Organic Light-Emitting Devices

Li Y., Lee B-S, Lee J.W., Chen P., Chen W-H, Lee B-S, Lee J.W., Lu C-S, Chen P., Chen W-H, National Chiao Tung University, TW

Organic light-emitting devices (OLEDs) add a completely new dimension to current display technology [1-3]. OLED displays are thinner, lighter, brighter, and cheaper to manufacture; which also consume less power than the current thin displays do. [...]

A Novel SPICE Compatible Current Model for OLED Circuit Simulation

Li Y., Lee B-S, Lee J.W., Lee B-S, Lee J.W., Lu C-S, Chen W-H, National Chiao Tung University, TW

high quality, and low power consumption display [1-2]. It is known that the brightness of the OLED is controlled by the current density of the device; therefore, precisely controlling the current density of active matrix [...]

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Chou H-M, Lo S-C, Tsai J-H, Li Y., NCHC, TW

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of [...]