Lee J.W. – Page 2 – TechConnect Briefs

Experiments on removing nano particles on a substrate using a supersonic particle beam

Lee J.W., Lee M.J., Lee J.W., Lee M.J., Yi M-Y, Pohang University of Science and Technology, KR

Cryogenic particle beam can be an effective means of removing nano-sized contaminant particles from a substrate surface. In order to generate a particle beam of high intensity and controlled size and temperature, Argon gas was [...]

Condensation and Evaporation of a Nano-sized Particle Moving in a Fluid Environment

Yi M-Y, Lee J.W., Lee M.J., Lee J.W., Lee M.J., Pohang University of Science and Technology, KR

Condensation and evaporation of a low temperature nano-sized argon particle moving in a gas/vapor environment was analyzed using the molecular dynamics simulation. First evaporation temperature for various heating rates was found and successfully compared with [...]

A Two-Dimensional Numerical Simulation of Organic Light-Emitting Devices

Li Y., Lee B-S, Lee J.W., Chen P., Chen W-H, Lee B-S, Lee J.W., Lu C-S, Chen P., Chen W-H, National Chiao Tung University, TW

Organic light-emitting devices (OLEDs) add a completely new dimension to current display technology [1-3]. OLED displays are thinner, lighter, brighter, and cheaper to manufacture; which also consume less power than the current thin displays do. [...]

A Novel SPICE Compatible Current Model for OLED Circuit Simulation

Li Y., Lee B-S, Lee J.W., Lee B-S, Lee J.W., Lu C-S, Chen W-H, National Chiao Tung University, TW

high quality, and low power consumption display [1-2]. It is known that the brightness of the OLED is controlled by the current density of the device; therefore, precisely controlling the current density of active matrix [...]

Molecular Dynamics (MD) Simulation on the Collision of a Nano-Sized Particle onto Another Nano-Sized Particle Adhered on a Flat Substrate

Yi M-Y, Lee J.W., Pohang University of Science and Technology, KR

Efficient cleaning of nano-sized particles from substrates becomes more and more crucial in nano fabrication. One promising technique is to bombard the contaminant particles with nano-sized bullet particles, but details of the collision process between [...]

A Unified Compact Model for Electrostatic Discharge Protection Device Simulation

Chou H-M, Cho Y-Y, Chou H-M, Lee J.W., Li Y., National Chiao Tung University, TW

In modern microelectronics manufacturing, whole chip electrostatic discharge (ESD) protection circuit design is necessary for obtaining robust electrical performance [1-5]. In designing the whole chip ESD protection circuit, owing to its high circuit complexity, an [...]

Investigation of Robust Fully-Silicided NMOSFETs for Sub-100 nm ESD Protection Circuits Design

Lee J.W., Tang H., Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Electrostatic discharge (ESD) becomes an important issue in vary large scaled integrated (VLSI) circuit design and manufacture, especially for the ultra-thin oxide nano-devices [1-3]. It results from a fact that the gate oxide will be [...]

A Study of the Threshold Voltage Variations for Ultra-thin Body Double Gate SOI MOSFETs

Tang C-S, Lo S-C, Lee J.W., Tsai J-H, Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Double gate silicon on insulator (SOI) devices are more and more attractive for sub-50 nm ultra-large scaled integrated (ULSI) circuits manufacturing. The double gate SOI devices, owing to a difficulty of manufacturing uniformity, suffer fluctuations [...]

A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation

Lin H-Y, Li Y., Lin H-Y, Lee J.W., Chiu C-M, Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Excimer laser annealing technique has been proposed in the fabrication of low temperature polycrystalline silicon (LTPS) in the recent years, in particular for the applications to active-matrix liquid crystal display (AMLCD) [1]. In comparing with [...]

Gate Length Scaling Effects in ESD Protection Ultra-thin Body SOI Devices

Lee J.W., Li Y., Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

In this paper we experimentaly explore the gate length scaling effects which related to the abrupt degation of electrostatic discharge (ESD) robustness for ultra-thin body silicon on insulator (SOI) devices and integrated circuits (ICs). It [...]