Kranti A. – TechConnect Briefs

Neural Computational Approach for FinFET Modeling and Nano-Circuit Simulation

Alam M.S., Kranti A., Armstrong G.A., Z. H. College of Engineering & Technology, IN

FinFETs are very promising for low power, low voltage portable applications. For nano-circuit simulation, a suitable FinFET model is required. A behavioural model based on a neural network has been developed in this work and [...]

Compact Model for Short Channel Effects in Source/Drain Engineered Nanoscale Double Gate (DG) SOI MOSFETs

Kranti A., Armstrong G.A., Queen’s University of Belfast, UK

In the present paper, a compact model for short channel effects (SCEs) in source/drain engineered nanoscale DG MOSFET, is proposed for the first time and the impact of spacer width (s), lateral source/drain doping gradient [...]