Kim H-G – TechConnect Briefs

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Kim H-G, Kim J-S, Kim Y.K., Yoon K-S, Kim H-G, Kim J-S, Kim Y.K., Kim H-G, Kim J-S, Kim Y.K., Won T., Inha University, KR

We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply [...]

Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

Kim H-G, Inha University, KR

we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are [...]