Khan H. – TechConnect Briefs

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

Khan H., Mamaluy D., Vasileska D., Arizona State University, US

We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values [...]

Self-consistent Quantum Mechanical Treatment of the Ballistic Transport in 10 nm FinFET Devices Using CBR Method

Khan H., Mamaluy D., Vasileska D., Arizona State University, US

CBR technique has been used to perform fully quantum-mechanical simulation of 10nm FinFET devices with varying fin width. Device characteristics have been observed and compared to the experimental values. It is observed from the simulation [...]

Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)

Khan H., Ahmed S.S., Vasileska D., Arizona State University, US

Novel device structures such as dual gate SOI, Ultra thin body SOI, FinFETs, etc. have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. In this paper, we use a semi-classical [...]