Kaur R. – TechConnect Briefs

Computer Simulations of CrO2 as a Spin Polarized Material for Spintronics

Kaur R., Mallia G., Yates K.A., Harrison N.M., Imperial College London, UK

Despite theoretical predictions of chromium dioxide being a half-metallic ferromagnet. Devices based on chromium dioxide have performed poorly. One major issue is the influence of defects on the electronic structure and magnetic properties as well [...]

Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, IN

In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual [...]

Authors: Kaur R.

Computer Simulations of CrO2 as a Spin Polarized Material for Spintronics

Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

An Iterative Approach to Characterize Various Advanced Non-Uniformly Doped Channel Profiles

Pre-Distortion Assessment of Workfunction Engineered Multilayer Dielectric Design of DMG ISE SON MOSFET

Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools