Kanda Y. – TechConnect Briefs

Shear Piezoresistance Coefficient Pi44 of n-type Silicon

Kanda Y., Matsuda K., Kojundo Chemical Laboratory Co. LTD, JP

The PR in silicon has been widely used in the framework of micro-electro mechanical systems (MEMS). Origin of the shear PR effect even in n-type Si was not always explained completely in despite of simpler [...]

MEMS Simulation in Heavily Doped Silicon Devices

Matsuda K., Kanda Y., Naruto University of Education, US

Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent [...]

Simulation for Low Temperature Coefficient Design of Piezoresistive and Hall Sensors

Matsuda K., Kanda Y., Naruto University of Education, JP

Simulation for the temperature coefficient of piezoresistive and Hall sensors is presented. Carrier and ionized impurity concentrations in the n-type silicon gage are calculated from the charge balance equation by applying Newton iteration scheme. The [...]

Implementation of Strain Induced Effects in Sensor Device Simulation

Matsuda K., Kanda Y., Naruto University of Education, JP

Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton's method taking into [...]

Simulation of Silicon Piezoresistive Sensors

Matsuda K., Kanda Y., Toyo University, JP

The temperature infiuence of the heavy doped silicon piezoresistive sensors is simulated. In this simulation, the density of state functions for impurity band and band edge tail are taken into account for carrier and ionized [...]