Jungemann C. – TechConnect Briefs

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

Nguyen C.D., Jungemann C., Meinerzhagen B., Technical University Braunschweig, DE

An Improved Modified Local Density Approximation (IMLDA) model for the electron inversion layer in strained Si-nMOSFETs is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance without increasing the [...]

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

Jungemann C., Grasser T., Meinerzhagen B., Technische Universität Braunschweig, DE

The shrinking of the device dimensions below 100nm is pushing the classical TCAD tools like the drift-diffusion (DD) or hydrodynamic (HD) models to their limits. While the impact of the shrinking on the accuracy of [...]

Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs

Nguyen C.D., Jungemann C., Neihues B., Meinerzhagen B., Sedlmeir J., Molzer W., ITEM-University of Bremen, DE

In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Neinhus B., Jungemann C., Meinerzhagen B., Universitat Bremen, DE

An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ [...]

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Jungemann C., Nguyen C.D., Decker S., Meinerzhagen B., Universitat Bremen, DE

An improved version of the modified local density approximation is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance of state-of-the-art NMOSFETs with very thin oxides for temperatures from [...]

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley’s Impedance Field Method and the Hydrodynamic Model

Decker S., Neinhus B., Heinemann B., Jungemann C., Meinerzhagen B., University of Bremen, DE

This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley's impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are [...]