Iñiguez B. – TechConnect Briefs

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

Hamid H.A., Roig J., Universitat Rovira i Virgili, ES

We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained [...]

DC to RF Small-Signal Compact DG MOSFET model

Lázaro A., Moldovan O., Cerdeira A., Fjeldly T.A., Universitat rovira i Virgili (URV), ES

In this paper we present a complete compact model for doped DG MOSFETs which includes explicit expressions of the channel current and of all small- and large-signal parameters. The model is based on a unified [...]

Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques

Fjeldly T.A., Kolberg S., Norwegian University of Science and Technology, NO

In nanoscale double gate MOSFETs, the dependence on the bias voltages of the 2D electron barrier topology in the conducting channel is all-important for the operation of the device. We consider a DG MOSFET with [...]

Compact Iterative Field Effect Transistor Model

Shur M.S., Turin V., Veksler D., Ytterdal T., Iñiguez B., Jackson W., Rensselaer Polytechnic Institute, US

Compact models for field effect transistors should satisfy two conflicting requirements. On one hand, they should be simple enough and should contain a small number of physics-based parameters to be suitable for parameter extraction. On [...]

Compact Model of Multiple-gate SOI MOSFETs

Iñiguez B., Hamid H.A., Jiménez D., Roig J., Universitat Rovira i Virgili, ES

In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., [...]