Hsu W.-C. – TechConnect Briefs

Performance Comparison of Non-planar MOSFETs

Liao Y.-B., Chiang M-H, Hsu W.-C., National Ilan University, TW

To gain insights into device variability, device scalability and even circuit performance, more comprehensive simulation data are presented. FinFET shows the highest transconductances corresponding to aforementioned highest IDLIN and IDSAT. Regarding process variation, same W¬Si/D [...]

Variability Study for Silicon Nanowire FETs

Liao Y.-B., Chiang M-H, Kim K., Hsu W.-C., National Cheng Kung University, TW

3-D numerical simulation shows that both the conventional and JL nanowire FETs are sensitive to structural variation whereas the former is more tolerable. Due to more increased Ion/Ioff for lower D and WSi in JL, [...]