Heitzinger C. – TechConnect Briefs

Investigation of the Conductance of Silicon Nanowire Biosensors Using the 2D Drift-diffusion Model

Damodaran S., Vadivelmurugan S., Do Q.T., Heitzinger C., Liu Y., Klimeck G., Purdue University, US

DNA-FETs are DNA sensors consisting of a semiconductor transducer and a functionalized surface. Their device structure is similar to a MOSFET, but the gate has been replaced by the functionalized surface. Since DNA-FETs allow direct [...]

An Impact Ionization Model Including an Explicit Cold Carrier Population

Grasser T., Kosina H., Heitzinger C., Selberherr S., TU Vienna, AT

Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic [...]

A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks

Binder T., Heitzinger C., Selberherr S., Technical University Wien, AT

We compare the two well-known global optimization methods, simulate annealing and genetic optimization, to a local gradient-based optimization techniques. We rate the applicability of each method in terms of the minimal achievable target value for [...]