Drennan P.G. – TechConnect Briefs

Analysis of Halo Implanted MOSFETs

McAndrew C.C., Drennan P.G., Freescale Semiconductor, US

MOSFETs with heavily doped regions at one or both ends of the channel exhibit some quantitative differences in electrical behavior compared to devices with laterally unform channel doping. These can include a peakiness to the [...]

Device Correlation: Modeling using Uncorrelated Parameters, Characterization Using Ratios and Differences

McAndrew C.C., Drennan P.G., Freescale Semiconductor, US

Partial correlations between parameters of different types of devices, such as effective channel lengthfor PMOS and NMOS devices, are often modeled and simulated statistically via correlation coefficients.However this is cumbersome and inefficient from a modeling [...]

Unified Statistical Modeling for Circuit Simulation

McAndrew C., Drennan P.G., Motorola, US

Accurate statistical simulation and modeling are important for IC design. Different types of statistical simulation require different types of statistical models. In this paper a unified approach to statistical modeling and characterization is presented. Based [...]