Do M.A. – TechConnect Briefs

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Wong J.S., Ma J.G., Yeo K.S., Do M.A., Nanyang Technological University, SG

A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the [...]

A Simple and Scalable Model for Spiral Inductors on Silicon

Sia C.B., Yeo K.S., Goh W.L., Swe T.N., Ma J.G., Do M.A., Lin J.S., Chan L., Nanyang Technological University, US

A new, simple and scalable inductor model for silicon-based spiral inductors has been presented in this paper. Compared to the conventional model, it can predict accurately the inductive characteristics and quality factor for inductors of [...]

Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model

Seah S.H.L., Yeo K.S., Ma J.G., Do M.A., Nanyang Technological University, SG

The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence [...]