Cumberbatch E.C. – TechConnect Briefs

Compact Models for Asymmetric Double Gate MOSFETs

Morris H.C., Abebe H., Cumberbatch E.C., San Jose State University, US

Double-gate MOSFET's are one possible option to further extend CMOS scaling when planar MOSFET's have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is [...]

SOS Gate Capacitance Modeling

Morris H.C., Cumberbatch E.C., Abebe H., San Jose State University, US

A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]