Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration
Pourfath M., Gehring A., Cheong B.H., Park W.J., Kosina H., Selberherr S., Vienna University of Technology, AT
Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively [...]