Chen W-H – TechConnect Briefs

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P., Groupe de Physique des Matériaux, FR

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

Effect of Fin Angle on Electrical Characteristics of Nanoscale Bulk FinFETs

Li Y., Chen W-H, National Chiao Tung University, TW

Bulk-finFET (fin-shaped field effect transistor) has been viewed as a good candidate for nanoscale VLSI device fabrication and nanoelectronic circuit design [1-5]. The structure features an excellent device characteristics compared with conventional planer structures. In [...]

A Two-Dimensional Numerical Simulation of Organic Light-Emitting Devices

Li Y., Lee B-S, Lee J.W., Chen P., Chen W-H, Lee B-S, Lee J.W., Lu C-S, Chen P., Chen W-H, National Chiao Tung University, TW

Organic light-emitting devices (OLEDs) add a completely new dimension to current display technology [1-3]. OLED displays are thinner, lighter, brighter, and cheaper to manufacture; which also consume less power than the current thin displays do. [...]

A Novel SPICE Compatible Current Model for OLED Circuit Simulation

Li Y., Lee B-S, Lee J.W., Lee B-S, Lee J.W., Lu C-S, Chen W-H, National Chiao Tung University, TW

high quality, and low power consumption display [1-2]. It is known that the brightness of the OLED is controlled by the current density of the device; therefore, precisely controlling the current density of active matrix [...]