Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model
Malladi R.R., Borich V., Sweeney S.L., Rascoe J., Newton K.M., Venkatadri S., Yang J., Chen S., IBM Systems and Technology, US
This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model [...]