Full-band Particle-based Simulation of Germanium-On-Insulator FETs
Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US
We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]