Akis R. – Page 2 – TechConnect Briefs

Gain in a Semiconductor Waveguide Qubit

Harris J., Akis R., Ferry D.K., Arizona State University, US

Recently, it has been suggested that it may be possible to use combinations of coupled quantum wire waveguides to form quantum computational qubits [1],[2]. However, there are several related problems intrinsic to this approach. First, [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

Discrete Impurity Effects in Silicon Quantom Dots

Milicic S.N., Vasileska D., Akis R., Gunther A., Goodnick S.M., Arizona State University, US

We have developed efficient self-consistent 3D Schrodinger-Poisson solver to model the energy level spectrum in silicon quantum dots. We find that the energy level spectrum in the dot can be easily tuned by varying the [...]

Modeling Artificial Molecules Composed of Coupled Quantum Dots

Akis R., Vasileska D., Arizona State University, US

Recently, there has been much interest in coupled quantum dots. With individual dots, if the energy levels can be resolved, then one can think of a dot as representing an "artificial atom" [1]. Thus, fabricating [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

Complex Potentials, Dissipative Processes and General Quantum Transport

Ferry D.K., Barker J.R., Akis R., Arizona StateUniversity, US

Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]