Abdolahd M. – TechConnect Briefs

Direct Integration of Ni2Si/Si Nanograss Heterojunction Array on the Gate Terminal of N-MOSFET Utilizing a CMOS Compatible Top-Down Technique

Taghinejad H., Taghinejad M., Ganji M., Rostamian A., Taghinejad H., Taghinejad M., Abdolahd M., Mohajerzadeh S., Tghinejad H., University of Tehran, IR

we take advantages of direct integration of Ni2Si/Si nanograss heterojunction array on a MOSFET's gate terminal, utilizing a CMOS compatible top-down technique, to realize a highly sensitive phototransistor. In the proposed technique, using a deep [...]

Integration of SiNWs on MOSFET Gate terminal: From device fabrication to electrical characterization

Taghinejad H., Taghinejad M., Taghinejad H., Taghinejad M., Saeedi A., Abdolahd M., Mohajerzadeh S., University of Tehran, IR

Nanostructured materials provide unique features that could not be achieved in bulk constructions. silicon nanowires (SiNWs) due to the exclusive controllable physical and electrical properties as well as established growth methods are most appealing ones. [...]