University of Technology Dresden

Improved layout dependent modeling of the base resistance in advanced HBTs

Lehmann S., Schroter M., University of Technology Dresden, DE

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been [...]

Compact Bipolar Transistor Modeling – Issues and possible solutions

Schroter M., University of Technology Dresden, DE

Recently, several advanced compact bipolar transistor models ave become available to the design community. For existing technologies, these models (and their internal formulation) are believed to offer sufficient flexibility and accuracy, especially compared to the [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

Tran H., University of Technology Dresden, DE

This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation [...]