University of Florida – Page 2

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Fossum J.G., Chouksey S., University of Florida, US

Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents [...]

A History of Electronic Traps on Silicon Surfaces and Interfaces

Sah C-T, Jie B.B., Chen Z., University of Florida, US

A review of the electronic or electron and hole traps on silicon surfaces and interfaces is given. They are increasingly affecting the electrical signal properties of silicon diodes and transistors as the technologies for digital, [...]

Differential Uptake of PEG-Silica-FITC Nanoparticles by Human Breast Cancer Cells and Normal Human Breast Epithelial Cells

Iwakuma N., Sharma P., Delano M.J., Moldawer L.L., Moudgil B.M., Grobmyer S.R., University of Florida, US

Background: An understanding of uptake of nanoparticles (NPs) by human cancer cells and non-cancer cells is important for the development of NPs as novel cancer therapeutic and diagnostic agents. Hypothesis: Uptake of NPs is increased [...]

A Fluorescence Spectroscopy Study on the Encapsulation of Hydrophobic Dyes in Core-Shell Nanoparticles

Chavez J.L., Wong J.L., Duran R.S., University of Florida, US

Novel core-shell nanoparticles were prepared as encapsulating agents for fluorescent organic dyes. These particles protect the dyes from polar solvents, allowing their use in aqueous environments, such as biological systems. The nanoparticles were synthesized using [...]

Recent Upgrades and Applications of UFDG

Fossum J.G., Trivedi V.P., Chowdhury M.M., Kim S-H, Zhang W., University of Florida, US

Recent upgrades of UFDG, a process/physics-based compact model for nonclassical MOSFETs having ultra-thin Si bodies (UTB), are overviewed, and several recent applications of the model are presented, exemplifying the potential benefits of FinFETs in nanoscale [...]

Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models

Jie B.B., Sah C-T, University of Florida, US

Frequently asked questions are addressed, “How accurate are the approximate long-and-wide-channel MOS transistors baseline models that have been used to develop the compact models for computer-aided circuit designs?” Three commonly used surface-potential (US=q*PSIS/kT) approximations of [...]

Nano-Mesosphere Drug Carriers for Localized Cancer Chemotherapy

Goldberg E.P., Almond B.A., Hadba A.R., Cuevas B.J, York A., Enriquez I., University of Florida, US

Aggressive conventional chemotherapy of solid cancers of the breast, lung, prostate, and colorectal area is severely limited by systemic toxic complications. New clinically practical concepts are needed for effective local therapeutic modalities. This paper reports [...]

Phonon Scattering in Doped Silicon by Molecular Dynamics Simulation

Yao M., Watanabe T., Phillpot S.R., Schelling P.K., Keblinski P., Cahill D.G., University of Florida, US

Molecular dynamics simulation is used to study the scattering of phonon wave packets of well–defined frequency . The simulation system is 22 unit cells in the direction normal to phonon propagation and 3000 unit cells [...]

Separating Single-Walled Carbon Nanotubes by Length

Rauwald U., Schmidt D.J., Hauge R.H., Smalley R.E., Ziegler K.J., University of Florida, US

Single-walled carbon nanotubes (SWNTs) have received great attention because of their unique electronic and mechanical properties combined with their chemical stability. Typically, SWNTs are microns in length; however, intermediate lengths between small spheroidal fullerenes and [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US

The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]