Università di Modena e Reggio Emilia

Leakage current in HfO2 stacks: from physical to compact modeling

Larcher L., Padovani A., Pavan P., Università di Modena e Reggio Emilia, IT

First, we present a Monte-Carlo model we developed for describing the charge transport in hafnium-based stacks, which allows reproducing voltage and temperature dependencies of the leakage current along with its statistical distribution. The model accounts [...]

Modeling Strategies for Flash Memory Devices

Padovani A., Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT

Flash memories are one of the most pervasive components of today electronic systems. The continuous scaling of the memory device opened new issues with regards to sensitivity of the cell threshold voltage to degradation mechanisms [...]

High-density polyethylene reinforced with titania nanoparticles

Bondioli F., Dorigato A., Fabbri P., Ferrari A.M., Messori M., Pegoretti A., Università di Modena e Reggio Emilia, IT

Titania nanoparticles were prepared by both hydrolysis of tetraethoxy titanium, in order to obtain a spherical shape, and by hydrothermal crystallisation. Nanoparticles were also surface modified with alkylsilanes in order to improve the compatibility with [...]

Synthesis and Synterability of Hydroxyapatite-Coated Zirconia Nanopowders

Bondioli F., Cannillo V., Ferrari A.M., Manfredini T., Università di Modena e Reggio Emilia, IT

Hydroxyapatite (HAP), Ca10(PO4)6(OH)2, is a well-known and a valuable implant material with biocompatibility and bioactive properties. Full utilisation of the unique properties of hydroxyapatite bulk ceramics is, however, possible only after its proper reinforcement, i.e. [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories

Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT

The purpose of this paper is to illustrate a physically-based model allowing the statistical simulations of oxide leakage currents in MOS transistors and Floating Gate memories. This model computes the leakage current through defects randomly [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT

This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be [...]

A New Compact Model of Floating Gate Non-Volatile Memory Cells

Larcher L., Pavan P., Gattel F., Albani L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper presents a new compact model of Floating Gate Non-Volatile Memory Cells using SPICE circuit elements. It features many advantages compared to previous models: it is simple and easy to implement and to update, [...]