San Jose State University – Page 2

Theory and Experiments on Periodic Lattice Distortions that Explain 1D Conductivity along the CuO2 Plane Ab And A-B Diagonals in YBa2Cu3O7 (YBCO) 50 nm Film with a 24 DEG Grain Boundary (Gb)

Sahibudeen H.S., Navacerrada M.A., Acrivos J.V., San Jose State University, US

Self consistent field (SCF) calculations carried out at San José State University (using MOLECOLE Linux codes) for a nano-particle of 18 molecules of T’-Nd2CuO4 explain the dxy symmetry for preferred superconductivity in the ab plane. [...]

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices

Morris H.C., DePass M.M., Abebe H., San Jose State University, US

Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]

Periodic Lattice Distortion in YBa2Cu3O7 50 nm film on SrTiO3

Navacerrada M.A., Acrivos J.V., San Jose State University, US

Synchrotron X-ray diffraction has been used to detect novel periodic lattice distortions (PLD) in highly c-axis oriented YBa2Cu3O7 (YBCO) 50 nm films grown on SrTiO3 substrate. The growth layer by layer of 50 nm YBCO, [...]

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

Morris H.C., De Pass M.M., San Jose State University, US

As MOSFET sizes have been reduced to nano-scale dimensions, existing models of device behavior, such as the drift diffusion equations, cease to be valid. In the nano domain, more fundamental equations, such as the Boltzmann [...]

Residual Stresses/Strains Analysis of MEMS

Hsu T-R., Sun N., San Jose State University, US

This paper describes the development of a finite element based MEMPACK code developed by the lead author and his graduate students. The MEMPACK code will be used for simulation and prediction of residual stresses and [...]