Peking University Shenzhen SoC Key Lab.

A Neural Network Method to Model Nanoscale FinFET Performance

He J., Peking University Shenzhen SoC Key Lab., CN

This paper presents a neural network method to model nanometer FinFET performance. The principle of this method is firstly introduced and its application in modeling DC and conductance characteristics of nanoscale FinFET transistor is demonstrated [...]

Mobility Enhancement from Process-Induced Stress of T-FinFET and Compact Model Development

He J., Peking University Shenzhen SoC Key Lab., CN

It is an often measure that the process-induced stress has been used in advanced CMOS process platform to increase the carrier mobility so to enhance MOSFET performance. It has also a strong effect on the [...]