Oregon State University – Page 2

Single Election Trapping in Nanoscale Transistors; RTS(Random Telegraph Signals) and l/f Noise

Forbes L., Miller D.A., Louie M.Y., Oregon State University, US

Random telegraph signal, RTS, noise[1] is most obvious in submicron devices with traps, for example in nanoscale MOS transistors, MOSFET’s, with a low number of carriers. RTS is sometimes an indicator of poor device quality [...]

Biodistribution and Toxicity of Nanomaterials In Vivo: Effects of Composition, Size, Surface Functionalization and Route of Exposure

Harper S.L., Maddux B., Hutchison J., Tanguay R.L., Oregon State University, US

Given the anticipated growth of the nanotechnology industry and the deficiency of toxicological information, there is an obvious need for rapid, relevant and efficient testing strategies to evaluate the biological activity and toxic potential of [...]

1/f Noise and RTS(Random Telegraph Signal) Errors in Comparators and Sense Amplifiers

Forbes L., Miller D.A., Poocharoen P., Oregon State University, US

An analysis has previously been made of the increasing portion of the threshold voltage being occupied by thermal noise levels and the bit error rates in digital logic[1] and memory circuits [2-4]. This analysis has [...]

1/f Noise and RTS(Random Telegraph Signals) and Read Errors in Nanoscale Memories

Forbes L., Miller D.A., Louie M.Y., Oregon State University, US

The use of charge storage on nanoscale particles has been realized in silicon integrated circuit memories [1,2] and utilized in commercial products[2]. An analysis has previously been made of the increasing portion of the threshold [...]

Thermal Noise and Bit Error Rate Limits in Nanoscale Memories

Forbes L., Mudrow M., Wanalertlak W., Oregon State University, US

Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.

DNA/Cellulose hybrid nanomaterials

Mangalam A., Simonsen J., Benight A.S., Oregon State University, US

One potential advantage of nanotechnology is the ability to engineer bottom-up hierarchical assembly of nanoparticles into functional macroscale materials and devices. The most promising mechanism for accomplishing this is self-assembly. In this project, an advanced [...]

Technique for Time and Frequency Dependent Solutions of the Diffusion Equation: Application to temperature of nanoscale devices

Forbes L., Wanalertlak W., Louie M.Y., Oregon State University, US

Typical CMOS device currents have remained around 1mA/um while devices have scaled down. The projection into the 2010 time frame is 0.01um or 10nm dimensions with 0.5V power supplies which results for a minimum dimension [...]