ON Semiconductor – TechConnect Briefs

A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications

Shastri S., Wu Y., Cai W.Z., Grivna G., ON Semiconductor, US

In this paper we describe for the first time a distributed model for the trench capacitor, which includes process parameters that may be extracted from the low-frequency measurement of one or two capacitor geometries. The [...]

On the Correlations Between Model Process Parameters in Statistical Modeling

Slezak J., Litschmann A., Banas S., Mlcousek R., Kejhar M., ON Semiconductor, CZ

Statistical modeling in the design of todays high performance integrated circuits (ICs) is a necessity to produce competitive products with short development time. The use of backward propagation of variance (BPV) has proven its worth [...]

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Loechelt G.H., Sellers J., Morgan J., Azam M., ON Semiconductor, US

The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]