Ohio State University – TechConnect Briefs

Static and Dynamic Properties of the Electrical Double Layer Near Amorphous Silica: Relevance for Device Design

Shi B., Shin Y.K., Zhang H., Hassanali A., Shin Y.K., Knight C., Singer S.J., Ohio State University, US

Amorphous silica (“glass”) is commonly used to fabricate micro- and nano-fluidic devices. Using an atomistic model, we have studied the static and dynamic properties of the electrical double layer near the water/amorphous silica interface. The [...]

Atomistic Simulations of Biomolecules at the Water‐Amorphous Silica Interface: Application to Peptides and DNA Oligomers

Shi B., Shin Y.K., Shin Y.K., Hassanali A., Singer S.J., Ohio State University, US

Realistic modeling of biomolecules near amorphous silica (“glass”), a material commonly used for biomedical device fabrication, is required for device design and evaluation. Our potential model, based on ab initio quantum chemical calculations, is designed [...]

Phase Field Modeling of Dislocation Network Coarsening, Dislocation – Impurity, and Dislocation – Precipitate Interactions

Shen C., Kazaryan A., Anderson P.M., Wang Y., Ohio State University, US

Interactions of dislocations with one another and their interactions with impurities and precipitates determine the behavior of plastic deformation of crystalline materials. In this presentation, we will discuss recent advances in phase field modeling of [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

Thermodynamic Processes of Si-interstitial Clusters

Kim J., Birner S., Richie D.A., Wilkins J.W., Voter A.F., Ohio State University, US

Interstitial defects control the dopant diffusion in ion-implanted silicon by providing traps for and sources of mobile interstitials. A study of the energetics and structural properties of interstitial clusters1 elucidates their growth path: interstitial clusters [...]

Design of MEMS Tunable Capacitor all Metal Microstructure for RF Wireless Applications

Mohamed A., Elsimary H., Ismail M., Ohio State University, US

In this work a new design of a tunable capacitor based on microelectromechanical system (MEMS) technology is presented. The design of high Q- tunable capacitor has been accomplished through bulk micromachining process with all metal [...]