National Nano Device Laboratories

Superposition Behavior in Babinet’s Effect on the Nano Au Particles Patterns

Wu S-C, Chen C-F, Chen H-L, Chao W-C, Chen C-F, Chen H-L, National Nano Device Laboratories, TW

The individual Babinet effect [1] in two types of complementary patterns can be added on a composed pattern mixed both patterns under the FTIR (Fourier Transform Infer-Red) spectroscopy measuring. That is the Babinet spectrum on [...]

Characterization and Modeling of Silicon Tapered Inductors

Peng A.S., Chen H.Y., Chen K.M., Huang G.W., Wang S.C., Chen H.Y., Chen K.M., Chang C.Y., National Nano Device Laboratories, TW

The characteristics of tapered inductors and standard inductors have been compared, and an improved compact model for tapered inductors is presented. The measured data of spiral inductors shows that the tapered inductor has higher quality [...]

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Wang S.C., Huang G.W., Chen K.M., Peng A.S., Tseng H.C., Hsu T.L., National Nano Device Laboratories, TW

In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed [...]

Effect of Substratum Morphology on Cell Behavior

Su W-T, Chu I-M, Yang J-Y, Lin C-D, National Nano Device Laboratories, TW

Contact guidance induced by the surface topography of the substrata influences the direction of cells with artificial material. Mouse bone marrow stromal fibroblast was examined on grooved substrata of varying dimension (0.3£gm~1.2£gm groove width, 0.5£gm [...]

An Automatic Macro Program developed for Characterization, Parameter Extraction and Statistic Analysis of Spiral Inductors

Huang G.W., Chiu D.Y., Chen K.M., National Nano Device Laboratories, TW

In the paper, a macro program based on Agilent IC-CAP software is developed for characterization, parameter extraction and statistic analysis of on chip spiral inductors. All procedures can be finished very easily in few buttons [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]

A Parallel Computational Technique for High Frequency HBT Circuit Simulation

Li Y., Huang K-Y, Chen C-K, Lee C.P., National Nano Device Laboratories, TW

We present a parallel-in-waveform simulation technique for high frequency heterojunction bipolar transistor (HBT) circuit characterization. On the contrary to the conventional frequency domain analysis, the HBT circuit equations are solved with waveform relaxation and monotone [...]