Fraunhofer ISIT – TechConnect Briefs

Preparation of functional PZT films on 6” and 8” silicon wafers by high rate sputtering

Dudde R., Kaden D., Quenzer H.-J., Wagner B., Fraunhofer ISIT, DE

Crack and void free polycrystalline PZT films in the range of 2 µm to 6 µm have been successfully deposited on silicon wafers using a novel high rate gas flow sputtering process. The development of [...]

Deposition of functional PZT films as actuators in MEMS devices by high rate sputtering

Quenzer H.-J., Dudde R., Jacobsen H., Wagner B., Föll H., Fraunhofer ISIT, DE

Crack and void free polycrystalline Lead Zirconate Titanate (PZT) films in the range of 5 µm to 10 µm have been successfully deposited on silicon substrates using a novel high rate gas flow sputtering process. [...]