Florida Institute of Technology – TechConnect Briefs

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]

Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]

Simulation of HgCdTe Double Layer Heterojunction Detector Devices

Hess G.T., Sanders T.J., Newsome G., Fischer T., Florida Institute of Technology, US

Mercury-Cadmium-Telluride (HgCdTe) diodes are used as detectors of long wavelength photons by interaction of the infrared radiation with the atomic lattice of the material, creating hole-electron pairs and subsequent photocurrents. Models for these physical phenomena [...]