Electronics and Telecommunications Research Institute (ETRI)

A new method for vertical growth of silicon nanowire in the vapor-liquid-solid (VLS) process

Kim Y.J., Suh D., Lee M.L., Ryu H., Electronics and Telecommunications Research Institute (ETRI), KR

We present a new facile method for vertical growth of the silicon nanowire (Si NW) that obviates the need for SiCl4 in vapor-liquid-solid (VLS) process. The VLS process that involves SiCl4 has two major disadvantages; [...]

Label-Free Protein Nano-Biosensor Using Top-Down Fabrication

Ah C.S., Ahn C-G, Kim A., Yu H.Y., Ahn C-G, Yang J.H., Baek I-B, Park C.W., Jun M.S., Lee S.J., Electronics and Telecommunications Research Institute (ETRI), KR

A nanosensor of n-type Si field-effect transistor (FET) via “top-down method” was employed to monitor PSA with great selectivity and high sensitivity up to 10 pg/mL. When a biomaterial, negatively charged PSA, is introduced through [...]

Low Temperature Volatile-Organic-Compound (VOC) Sensor Based on Tungsten Oxide Nanorods

Kim Y-S, Kim Y.T., Kim Y-S, Kim Y.T., Lee K., Electronics and Telecommunications Research Institute (ETRI), KR

Tungsten oxide sensors were fabricated by using highly crystalline and homogeneous WO2.72 nanorods, previously synthesized and characterized with average 75-nm length and 4-nm diameter [1]. They provide unique opportunities for investigating the effects of size-controlled [...]