Chung-Ang University – TechConnect Briefs

A Nanoelectronic Device Based on Endofullerene Peapod: Model Schematics and Molecular Dynamics Study

Kang J-W, Byun K.R., Lee H.J., Lee J-H., Lee H.J., Lee J-H., Hwang H-J., Chung-Ang University, KR

We investigated a nanoelectronic device based on multi endo-fullerenes shuttle memory element based on nanopeapods using classical molecular dynamics simulations. We suggested the model schematics of endo-fullerene shuttle memory device fabrication. The dynamics of the [...]

Molecular Dynamics Study of Electromechanical Nanotube Random Access Memory

Kwon O-K., Kang J-W, Byun K.R., Lee J-H., Hwang H-J., Chung-Ang University, KR

In this work, an electromechanical nanotube random access memory (NRAM) device based on carbon nanotube (CNT) shown in Fig. 1 was investigated using atomistic simulations. The interaction between the CNT-lever and the drain electrode or [...]

Melting of Ultrathin Copper Nanobridges

Kang J-W, Hwang H-J., Chung-Ang University, KR

The previous studies on nanoclusters and infinite nanowires have shown the physical phenomena related to only the melting of nanoclusters and nanowires. This study showed the various physical phenomena of ultrathin nanobridges, such as the [...]

Mechanical Properties of SiC Nanotubes

Moon W.H., Ham J.K., Hwang H-J., Chung-Ang University, KR

We investigate the mechanical properties of SiC nanotubes using molecular dynamics simulation. We find that SiC nanotubes are less stiff than the other nanotubes considered so far, such as BN or C nanotubes. However, Youngs [...]

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon

Son M-S., Hwang H-J., Chung-Ang University, KR

In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. [...]