We investigated a nanoelectronic device based on multi endo-fullerenes shuttle memory element based on nanopeapods using classical molecular dynamics simulations. We suggested the model schematics of endo-fullerene shuttle memory device fabrication. The dynamics of the electroemission of the endo-fullerenes from the peapod were closely related to the height of the potential energy barrier closely related to the threshold electrostatic field intensity, the empty nano space inside the peapod for the endo-fullerene acceleration, the number of the endo-fullerenes affecting the correlated collisions, the initial configuration of the endo-fullerene in the peapod, and the period of the external electrostatic field. The endo-fullerene shuttle memory element could operate a nonvolatile nano memory device. The switching speed, the applied force field, and the active region should be considered to design the endo-fullerene shuttle memory element.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 293 - 296
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics