TW – Page 41 – TechConnect Briefs

An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs

Kung J., National Lienho College of Technology and Commerce, TW

An analytical mobility model of the polysilicon (Poly-Si) TFT is important for the design and analysis of display arrays. These transistors can be used both as switching and driving components. Jacunski et al. [1] used [...]

Relaxation-based Circuit Simulation for Large-scale Circuits with Lossy Transmission Lines

Chen C-J., Chinese Culture University, TW

This paper integrates a time-domain transmission line calculation method and relaxation-based circuit dimulation algoright, and investigates the transient response simulation of large-scale circuits with transmission lines. Experimental results have been provided to justify the performance [...]

Robust Design of Silicon Piezoresistive Pressure Sensors

Shing T-K, Industrial Technology Research Institute, TW

In order to analyze silicon piezoresistive pressure sensors, several methods are used to obtain the stress distribution for different sizes and config,urations of square diaphragm type silicon pressure sensors. Furthermore, through integral considerations and thoughtful [...]