In order to analyze silicon piezoresistive pressure sensors, several methods are used to obtain the stress distribution for different sizes and config,urations of square diaphragm type silicon pressure sensors. Furthermore, through integral considerations and thoughtful arrangements, the whole device nonlinearities (including the nonlinearities caused by piezoresistive relations and die structure) and output voltage (varied due to different dimensions and locations of piezoresistors) can all be calculated accurately. The Taguchi method then is adopted to help achieve optimal design based on the developed CAD tool. It helps us understand more about the effects of chosen parameters as well as achieve a better design. It is anticipated that this design method and tool will be further extended to other types of piezoresistive pressure sensors in the future and help shorten the design cycle time and development costs effectively.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 597 - 601
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications