KP – TechConnect Briefs

In-Situ Assessment of Wafer-Level Hermeticity by Micromembrane Technique

Yang C.-M., Jung H., Park E.M., Park J.H., Park E.M., Park J.H., Kim H-Y, Lee K-R, National Nano FabCenter, KP

Generally, the quantitative hermeticity of Wafer level Vacuum Packaging (WLVP) has been evaluated by integration of pirani gauge vacuum senses. But, this requires complex fabrication process and higher chip cost. In this work, hermeticity and [...]

Optimization of preparation conditions for size-controlled solid lipid nanoparticles

Choi K-O., Jung J., Ryu J., Che J., Ko S., Sejong university, KP

This study is to prepare solid lipid nanoparticles, with target sizes at 100, 500 and 1000 nm. Nanocrystallization method was applied to prepare solid lipid nanoparticles using beef tallow, hydrogenated soybean oil and hydrogenated palm [...]

Novel Manufacturing Technology of Polymeric Nanocomposites Using Supercritical Fluid Process

Jung H-T, Hong Y., Lee H., Lee S., Lee H., Lee S., Park M., Kim J., Lim S., Korea Institute of Science & Technology, KP

The increasing interest during the last few decades in decreasing the environmental effects of the release of organic compounds and aqueous waste has motivated the development of polymeric materials in supercritical fluids(SCF). However, the advantages [...]

A Vertical MOSFET for Charge Sensing in the Convex Corner of Si Microchannels

Lim G., Park C-S, Lyu H-K, Kim D.S., Shin J-K, Choi P., Lee M., Kyungpook National University, KP

In this paper, we will present a vertical MOSFET formed in the convex corner of silicon microchannels which might be useful for detecting charged biomolecules. The cross type microchannels have four MOSFETs and four pairs [...]

A New Method of Excluding The External Acceleration’s Effect in a Micromachined Magnetometer for Navigation Systems

Cho J-M, Kim K.S., An S.D., Park H.J., Hahm G., Samsung Electromechanics Co., LTD., KP

A new type of magnetometer-accelerometer is developed with a silicon micromachining. The operation principle of the sensor is based on the well known Lorentz force caused by the interaction of a current and an external [...]