JP – Page 28 – TechConnect Briefs

HiSIM: Accurate Charge Modeling Important for RF Era

Miura-Mattausch M., Navarro D., Ueno H., Mattausch H.J., Miura-Mattausch M., Morikawa K., Itoh S., Kobayashi A., Masuda H., Hiroshima University, JP

Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge [...]

Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Matsuda K., Nakatsuji H., Kamakura Y., Naruto University of Education, JP

Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]

Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs

Hane M., Ezaki T., Ikezawa T., NEC Corporation, JP

We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and [...]

Effects of Gold Contacts on Transport through Benzene Molecule

Farajian A.A., Belosludov R.V., Mizuseki H., Kawazoe Y., Tohoku University, JP

Miniaturization of electronic devices has resulted in intensive interest in molecular devices that basically consist of a group of a few atoms, in contrast to the previous ‘bulk’ materials. As the molecules that are to [...]

Theoretical Analysis of Donor – Spacer – Acceptor Structure Molecule for Stable Molecular Rectifier

Mizuseki H., Niimura K., Majumder C., Belosludov R.V., Farajia A.A., Kawazoe Y., Institute for Materials Research, Tohoku University, JP

Recently, the field of molecular electronics has attracted strong attention as a post-silicon technology to enable future nanoscale electronic devices. The realization of a molecular device with a unimolecular rectifying function is one of the [...]

An Organic Molecule – Fullerene Mixture for a High Efficiency Photovoltaic Device: Theoretical Study

Mizuseki H., Niimura K., Majumder C., Kawazoe Y., Tohoku University, JP

The current general trend in research and development of photovoltaic elements is aimed at producing lower cost devices. An encouraging breakthrough in the development of highly efficient materials has been achieved by mixing electron-donor type [...]

High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm

Murakawa M., Oda Y., Amakawa H., Baba S., Higuchi T., Nishi K., AIST, JP

In this paper, we show, for the first time, GA application to process model calibration. We propose a distributed GA based calibration technique combined with the traditional local optimization algorithm, which reduces time for calibration [...]

Nanoscale Control of Light-induced Degradation in Amorphous Silicon

Shirai K., Yamazaki Y., Katayama-Yoshida H., ISIR, Osaka University, JP

The major problem of amorphous silicon solar cell is the light-induced degration. A recent experiment shows that this problem may be solved by a CN treatment. In this paper, microscopic mechanism of this CN treatment [...]

Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs

Wakabayashi A., Kazami Y., Ozawa J., Mitani Y., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping [...]

Local Oxidation Characteristics of Single Crystal Silicon

Ichida Y., Morimoto Y., Sato R., Saito N., Utsunomiya University, JP

Recently, the surface modification with an atomic force microscope (AFM) has attracted special interest as one of the surface processing techniques in a nanometer scale and investigated vigorously [1]. The nanometer-scale scratching (nanoscratching) that removes [...]