IR – Page 4 – TechConnect Briefs

Controllable growth of ZnO nanorod-carbon nanotube heterojunction arrays by low-temperature wet chemical bath deposition method for using in dye solar cell

Dehghan Nayeria F., Asl Soleimania E., Darbaria S., Sabbaghzadehb J., Mohajerzadeha S., Tehran of University, IR

In this paper, we describe a cost-effective and efficient approach for the large-scale synthesis of heterojunctions between ZnO NRs and MWCNTs. Our work represents a new type of heterostructure with many benefits. The wet chemical [...]

New model of seven layers in PEMFC

Rakhshanpouri S., Rowshanzamir S., School of Chemical Engineering, IR

This model is an isothermal, isobar, one-dimensional and steady-state model for a polymer electrolyte fuel cell with a 117 Nafion membrane that considers seven-layer of fuel cell. In former years, Springer and colleagues presented the [...]

New model of seven layers in PEMFC

Rakhshanpouri S., Rowshanzamir S., School of Chemical Engineering, IR

This model is an isothermal, isobar, one-dimensional and steady-state model for a polymer electrolyte fuel cell with a 117 Nafion membrane that considers seven-layer of fuel cell. In former years, Springer and colleagues presented the [...]

Novel ultra-fine hollow needles formed on Silicon membranes

Sanaee Z., Mohajerzadeh S., University of Tehran, IR

In this paper we report the realization of record-small hollow needles. The fabrication process does not need a three-dimensional lithography and uses a high precision deep vertical etching in a hydrogenation assisted ion etching unit. [...]

Nano-porous poly-silicon gated ion selective field effect transistors

Zehfroosh N., Shahmohammdi M., Mohajerzadeh S., University of Tehran, IR

We report the realization of ultra high sensitivity ion-selective field effect transistors (ISFET) devices by means of a nano-porous silicon structures placed on the gate region. Thanks to the presence of a nano-porous polysilicon film [...]

Novel Metal Oxide Deposition Method to Fabricate Nanostructures

Mansouri M.R., Mansouri R., Sandooghchian M., Mansouri M.R., Mansouri R., Kerman Semiconductor Company and university of Payem -e- Noor, IR

by this project deposition of metal oxide like SnO2 was deposited on Si wafer by applying novel developed method and then ZnO pudgy nanopillars were fabricated on the very deposited layer. this new developed approach [...]

Application of Sugimoto model on particle size prediction of colloidal TiO2 nanoparticles

Mehranpour H., Askari M., Ghamsari M.S., Farzalibeik H., Sharif University of Technology, IR

This can be provided by understanding the nucleation and growth mechanism of nanoparticles. In this paper, the nucleation and the growth of TiO2 nanoparticles were studied with Sugimoto model, in a homogeneous closed system which [...]

Manufacture of ultrafine drug particles via the Rapid Expansion of Supercritical Solution (RESS) Process using Taguchi approach

Asghari I., Esmaeilzadeh F., Shiraz University, IR

A multitude of pharmaceutical substances are often insoluble or only slightly soluble in aqueous media and the application of oral or injectable drugs is often limited by its low bioavailability. Recently, there have been great [...]

The Use of Taguchi Method to Determine Factors Affecting the size of fine attapulgite particles generated by rapid expansion supercritical solution with and without cosolvents

Asghari I., Esmaeilzadeh F., Shiraz University, IR

The presence of fine particles tends to increase viscosity. Besides the solid load particle properties, especially the specific surface area, have a pronounced impact on the suspension’s viscosity. Attapulgite is used as a viscosifier in [...]

Novel interdigital actuators and sensors based on highly overlapped branched carbon nanotubes

Darbari S., Abdi Y., Ebrahimi A., Mohajerzadeh S., University of Tehran, IR

This work presents a novel interdigital structures of branched carbon nanotubes on silicon-based membranes where the heavy overlapping between neighboring lines leads to a high capacitance. The value of the capacitance is so high (of [...]