AT – Page 6 – TechConnect Briefs

A New Analytical Energy Relaxation Time Model for Device Simulation

Palankovski V., Kosina H., Hernandez A., Selberherr S., TU Vienna, AT

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed [...]

Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation

Hössinger A., Selberherr S., TU Vienna, AT

We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity profiles can be calculated as well [...]

Numeric Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis

Dragosits K., Selberherr S., TU Vienna, AT

Simulation of ferroelectric hysteresis allows the analysis of nonvolatile memory cells which are based on ferroelectric materials. We give an overview of our algorithm for the calculation of effects caused by field rotation. Implementation of [...]

A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation

Kaiblinger-Grujin G., Selberherr S., Vienna Technical University, AT

We present analytical electron mobility formulae for Si which treat the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte Carlo (MC) [...]

Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization

Pyka W., Selberherr S., Technical UniversityVienna, AT

During sputter deposition of metal layers bulges at sharp convex corners can arise and are observed after metalization of contact holes for semiconductor circuits. We present an explanation of this phenomenon by assuming that in [...]

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