AT – Page 4 – TechConnect Briefs

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

The Austrian NANO Initiative: Small Country with Strong Expertise

Haas M., Glenck E., Austrian Research Promotion Agency (FFG), AT

The Austrian NANO Initiative is the multi-annual public funding programme for nanoscale sciences and nanotechnology. It coordinates different action lines at national and regional levels. The Austrian Research and Promotion Agency (FFG) runs the programme [...]

NILCom® – Commercialization of Nanoimprint Lithography

Luesebrink H., Glinsner T., Moormann Ch., Bender M., Fuchs A., EV Group, AT

NILCom is a consortium and technology platform for Nanoimprint Lithography (NIL) processes. NILCom offers the opportunity to leverage NIL synergies and support market segment acceleration for processes and infrastructure in its main areas of interest: [...]

Bulk Nanostructured Metals by Severe Plastic Deformation (SPD)

Zehetbauer M.J., Krystian M., Lacom W., Vienna University, AT

The top-down methods of “Severe Plastic Deformation (SPD)” have been shown to have the potential for directly converting conventional metals into submicron- or nano-scaled bulk materials. These techniques exhibit significant advantages compared to bottom-up ones: [...]

New Highly Efficient Non-invasive Nanoparticulate Delivery Systems for the Treatment of Chronic Diseases

Sinner F.M., Institute of Medical Technologies and Health Management, Joanneum Research, AT

We herein report the overall goals of the joint project “Nano-Health” and preliminary results of two sub-projects (Nano-Health started in October 2004), which was positive evaluated by international reviewers within the first Call of the [...]

Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

Kosina H., Nedjalkov M., Selberherr S., Institute for Microelectronics, TU Vienna, AT

A Quantum Monte Carlo (QMC) method taking into account both interference and dissipation effects is presented. The method solves the space-dependent Wigner equation which includes semi-classical scattering via the Boltzmann collision operator. The classical force [...]

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Gehring A., Grasser T., Kosina H., Selberherr S., Institute for Microelectronics, Vienna, AT

We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and [...]

FE-Simulation of Fast Switching Behavior of Magnetic Nanoelements

Fidler J., Schrefl T., Forster H., Suess D., Dittrich R., Vienna University of Technology, AT

Numerical micromagnetics is an essential tool to optimize magnetic storage media, spin electronic devices, such as MRAM and microsensors. The application of these devices requires a profound knowledge of the reversal mechanism. In nanostructured magnets [...]

An Impact Ionization Model Including an Explicit Cold Carrier Population

Grasser T., Kosina H., Heitzinger C., Selberherr S., TU Vienna, AT

Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic [...]

Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling

Gehring A., Grasser T., Selberherr S., TU Vienna, AT

Simulation of gate oxide tunneling currents in subquartermicron devices requires correct modeling of the electron energy distribution function in the channel region. However, the common assumption of a heated Maxwellian distribution function leads to a [...]