Papers:
Molecular Dynamics (MD) Simulations of Reactive Ion Etching (RIE) of Silicon by Cl, Cl2, Br and Br2 Cations
Simulations of Cl plasma etch of Si surfaces with MD techniques agree reasonably well with the available experimental information on yields and surface morphologies. This information has been supplied to a Monte Carlo etch profile [...]
Computer Aided Mask-Layout for Bulk Etch Fabrication
This paper presents a method to synthesize the mask layout geometry for a MEMS wet etching process. Given a desired part geometry, the method determines a candidate mask geometry that will etch to the final [...]
A Semi-Empirical Resist Dissolution Model for Sub-micron Lithographies
In this paper, we present a new resist dissolution model suitable for large range of application domains - from memory devices employing < 130nm design rules to MEMS devices with design rules exceeding 10s of [...]
A Method of MOSFET Dopant Profile Prediction and its Use in Transistor Design
As MOS transistor size shrinks to sub-quartermicron dimensions, accurate knowledge of the dopant concentration in various regions of the transistor is becoming more and more important for device simulations. We have developed a methodology to [...]
Modeling Image Formation in Layered Structures: Application to X-ray Lithography
In the fabrication of semiconductor devices using lithography, the modeling of the exposure process is very often needed. The elements of a typical exposure system from a modeling perspective comprise of a radiation source, a [...]
Numerical Simulation for the Sacrificial Release of MEMS Square Diaphragms
Chemical etching of sacrifeial layers is a widely used technique in surface micromachining Etch rate prediction of the sacrif cial layer in an etchant is critical for optimizing a giving fabrication process. This paper presents [...]
Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization
During sputter deposition of metal layers bulges at sharp convex corners can arise and are observed after metalization of contact holes for semiconductor circuits. We present an explanation of this phenomenon by assuming that in [...]
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Industry sector: Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation, Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3